定于2010年9月13日(周一)下午2：00-3：00，以及9月14日(周二)上午10：00-12：00在教三-301室举行两场学术报告，请有兴趣的教师、研究生及本科生光临。
1. 9月13日(周一)下午2：00-3：00，报告人：Erich Kasper教授
题目：Epitaxy of Si/Ge Heterostructures
Abstract:
Abstract:
Heterostructures offer many advantages for micro- and optoelectronic device functions. We report about structures and challenges, and address specifically growth and processing with low thermal budget.
2. 9月14日(周二)上午10：00-12：00，报告人：Erich Kasper教授
题目：Selected Chapters of Si based Photonics.
Abstract:
Silicon based Photonics has recently got additional momentum by progress in waveguide and active device research. As waveguides with unrivalled index contrast silicon box and rib lines on silicon on insulator( SOI ) have proven to be available for many different guiding purposes. Combined with SiGe heterostructure devices a variety of on-chip circuits with mixed optical and electrical functions will be possible.
Abstract:
Silicon based Photonics has recently got additional momentum by progress in waveguide and active device research. As waveguides with unrivalled index contrast silicon box and rib lines on silicon on insulator( SOI ) have proven to be available for many different guiding purposes. Combined with SiGe heterostructure devices a variety of on-chip circuits with mixed optical and electrical functions will be possible.
3. 9月14日(周二)上午10：00-12：00，报告人：余金中教授
题目：SOI Waveguide Devices: Optical Modulator/Switch and Coupler
Abstract:
Modulator/switch is the core device applied in optical cross-connect (OXC) and optical add-drop multiplexing systems and has a great application prospect in the domains of computer and optical communication. The mechanism and properties of the micro-resonator devices with several configurations are analyzed with the help of the transfer matrix method. The fabrication processes of SOI-based submicron waveguides and micro-resonators are investigated and optimized. With these theoretical and technical researches, we propose and demonstrated a number of high-performance passive and active devices based on SOI (Silicon-on-insulator) microring and microdisk resonators, including (i) single mode microring resonator with high Q factor, (ii) asymmetrical coupled add-drop microring with ultra-high extinctions, (iii) low-crosstalk microring filter with CROW (coupled-resonator optical waveguide) configuration, (iv) high-speed microring-based electro-optical switch and modulator. The main results: SOI microring modulator/switch: modulation speed: 1.9Gbit/s, rise/fall time: 77 ps/83 ps, Switching time: 300ps/380ps; Grating couplers: Coupling efficiency: 50%, 3dB bandwidth: 120nm; Group delay performance: 17 ps in the 3-stage double channel SCISSOR, 66 ps in the 8-stage single channel SCISSOR.
报告人简介：
Erich Kasper graduated in physics at the University in Graz, Austria. From the same university he earned the Ph.D. degree with a thesis on electrical properties of dislocations. In his professional carrier he joined the research departments of German companies Telefunken, AEG and Daimler Benz.In their Research Lab in Ulm, Germany, he was responsible for "Novel Si structures and devices". 1994 he moved to the University of Stuttgart, Germany, as head of the Institute of Semiconductor Engineering where he built up a heterostructure device lab with MBE, clean room facility and low thermal budget processing. Since 2008 he holds a special research professorship in Stuttgart. In China he is guest professor at HUST, Wuhan. Erich Kasper spent long lasting contributions to material science (Si-MBE, SiGe, ultrathin superlattices, to device physics (HBT, MODFET, IMpatt, resonance phase operation, photodetection), and to fields of application (mm-wave radar, low power electronics, photonics ).
余金中研究员，1965年中国科学技术大学物理系毕业，1967年半导体研究所研究生毕业，师从王守武院士。1982－1983、1987、1990-1991年留学日本理化学研究所和大阪大学，师从难波进教授，获大阪大学工学博士学位。1992和2001年作为访问学者在美国硅谷和德国斯图加特大学工作和讲学。
余金中现任半导体研究所学术委员、光学仪器国家重点实验室学术委员会委员、中国电子学会光电子学组学术委员，中国科学院研究生院、浙江大学、山东大学、厦门大学、北京工业大学、华侨大学和河北大学兼职教授，《半导体光电子》、《飞通光电子技术》杂志编委。美国国际光子工程协会 (SPIE)、中国光学学会会员和中国电子学会高级会员。
长期从事半导体光电子学研究，目前着重研究硅基光电子集成、硅基光波导器件和SiGe/Si异质结和器件的生长、制备和特性表征。
余金中现任半导体研究所学术委员、光学仪器国家重点实验室学术委员会委员、中国电子学会光电子学组学术委员，中国科学院研究生院、浙江大学、山东大学、厦门大学、北京工业大学、华侨大学和河北大学兼职教授，《半导体光电子》、《飞通光电子技术》杂志编委。美国国际光子工程协会 (SPIE)、中国光学学会会员和中国电子学会高级会员。
长期从事半导体光电子学研究，目前着重研究硅基光电子集成、硅基光波导器件和SiGe/Si异质结和器件的生长、制备和特性表征。
